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  • 08월 28일 16시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

Radial p-n junction solar cell; composite of n-type ZnO and porous silicon

등록일
2008년 8월 12일 11시 27분 37초
접수번호
1232
발표코드
31P119포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 <발표Ⅱ>
발표형식
포스터
발표분야
물리화학
저자 및
공동저자
박은경, 한봉우, 이재승, 이정우, 이휘건
한양대학교 화학과, Korea
Semiconducting nanowires have improved many different technologies. Because vertically aligned nanowire solar cells have been shown theoretically to be less sensitive to impurities, we made aligned silicon nanowires. Silicon nanowire arrays were made by an chemical etching method. Hydrofluoric acid and ethyl alcohol were mixed and added to an open Teflon tank. After p-type silicon nanowires were made, deposition of n-type ZnO film was performed on Si nanowires using atomic layer deposition for ZnO seed layer fabrication and chemical solution method for seed layer growth and thermal annealing at 400℃. When it is exposed to light, the efficiency of p-n junction solar cell increased by 5 times than without light. As the process is simple, low-cost, this method will be critical to improve device performance in the future.

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