abs

학술발표회초록보기

초록문의 abstract@kcsnet.or.kr

결제문의 member@kcsnet.or.kr

현재 가능한 작업은 아래와 같습니다.
  • 08월 28일 16시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

Synthesis of large-area Si nanowire array by chemical etching and their field emission properties

등록일
2008년 8월 12일 11시 29분 26초
접수번호
1243
발표코드
31P184포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 <발표Ⅱ>
발표형식
포스터
발표분야
물리화학
저자 및
공동저자
조용재, 김창현, 정경복1, 박정희
고려대학교 소재화학과, Korea
1고려대학교 신소재화학과, Korea
Large-area Si nanowire array were synthesized by room-temperature chemical etching in aqueous solution of hydrofluoric acid and hydrogen peroxide, using the silver nanoparticles as catalysis. The length of the silicon nanowires was controlled by varying the etching time. The crystalline graphite layer deposition was performed with a controlled thickness, to produce highly conductive Si-C core-shell nanocable. Field emission properties are greatly enhanced with the C deposition. We performed the substitution reaction to synthesize high-density silicon carbide, iron silicide, and manganese silicide array, in order to extend the application in a filed of nanosize electronic and magnetic devices. The morphology and structure of the products were analyzed by scanning electron microscopy, energy dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, electron-energy loss spectroscopy, and Raman spectroscopy. The conductivity and photoconductivity of the Si-based arrays were also measured.

상단으로