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  • 03월 04일 13시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

Anisotropic character of charge carrier mobility on thin-film transistor through the alignment of semiconductor materials

등록일
2005년 2월 17일 17시 10분 17초
접수번호
1059
발표코드
26P284포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 <발표Ⅱ>
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
강석주, 노용영, 김지은, 김동유
광주과학기술원,
Organic thin film transistors (OTFTs) have received enormous interests as a low-cost and flexible alternative to amorphous silicon transistors for electronic applications of large-area circuits. OTFT device performance such as high charge carrier mobility, Ion/Ioff ratio and low leakage current are required. Therefore semiconductor for OTFT based on conjugated polymers, oligomers and hybrid materials have been investigated for high performance OTFTs. However leakage currents between device cells may be problems. A uniaxial alignment of semiconductor materials along the channel direction may be a good method not only to reduce leakage currents but also to increase charge carrier mobility. Therefore, we have spin-coated the rubbing layer on silicon substrate. And then we have deposited pentacene as a semiconductor layer on it. In the last procedures, we have characterized anisotropic properties through UV-Vis spectrum and measuring the mobility of pentacene layer.

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