KCS

We have studied the electroluminescence (EL) properties of EL device prepared by using silicon carbide (SiC). The porous silicon carbides (PSCs) were formed by anodizing n-type and p-type 6H silicon carbide in an ethanoic HF solution under the dark condition, respectively. Analysis of the structure of the PSC surface was performed with the use of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The EL device can be prepared from the pulsed excimer laser deposition. We have demonstrated successfully that the EL device fabricated by using SiC shows a blue-green EL at room temperature.