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Characterization of TiOxNy films by structural and optical properties using PECVD method

등록일
2005년 2월 17일 18시 17분 29초
접수번호
1069
발표코드
21P121포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
토 <발표Ⅲ>
발표형식
포스터
발표분야
물리화학
저자 및
공동저자
송용화, 배인섭, 조상진, 부진효
성균관대 화학과,
We have deposited titanium oxynitride thin films on Si(100) substrates at 500℃ using RF PECVD system. Titanium iso-propoxide was used as precursor with different nitrogen flow rate to control oxygen and nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy analysis. With increasing nitrogen flow rate the total amounts of nitrogen and titanium were increased while that of oxygen was decreased. The XPS result also showed a binding energy shift toward high energy side with increasing nitrogen content. The film growth orientation and nanostructural characteristics were also analyzed by scanning electron microscopy as well as transmission electron microscopy. Deposition at higher nitrogen flow rate results in finer clusters with a nano-scale grain size and a slower growth rate. Nanoindentation experiments showed strong dependency on the composition and nanostructure in the hardness range of 8 and 16 GPa.

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