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  • 01월 01일 09시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

Optical and electrical properties of Si quantum dots

등록일
2005년 2월 23일 17시 25분 57초
접수번호
1088
발표코드
금6C4심 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 15시 : 30분
발표형식
심포지엄
발표분야
물리화학 - 물리Ⅰ: 나노과학의 물리화학적 접근법
저자 및
공동저자
박성주
광주과학기술원 신소재공학과,
Si has played a very important role in the development of information technology. The 3-dimensionally confined nanoscale Si is also expected to have very interesting physical properties which can be used in the new functional devices but the physical properties are not well understood. We have studied the structural, optical, and electrical properties of Si quantum dots(QDs). The self-assembled Si QDs were grown in the silicon nitride films by plasma enhanced chemical vapor deposition using SiH4 and N2 (or NH3) gases. The transmission electron microscope (TEM) image of Si QDs showed that the amorphous or crystalline Si QDs were grown in the silicon nitride film. The TEM and photoluminescence(PL) measurements of Si QDs show that the PL emission comes from the quantum confinement effect in the Si QDs not from the chemical bonding or defect states. The current dependent electroluminescence(EL) shift was observed and this was attributed to the EL from the excited energy states of Si QDs. The electron charging and discharging processes were also studied by using metal-insulator-semiconductor (MIS) structures containing Si QDs. The Coulomb blockade effect was observed in the metal-insulator-metal (MIM) structure which contains Si QDs and the carrier transport mechanism will be discussed.

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