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Current Status of Low-k Dielectric Materials Development at Postech

등록일
2005년 8월 7일 12시 27분 22초
접수번호
0123
발표코드
금2G5심 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 14시 : 00분
발표형식
심포지엄
발표분야
고분자화학 - 고분자 나노 정보 소재 (Polmeric Nanomaterials for Information Technology)
저자 및
공동저자
이문호, 오원태, 황용택, 박영희, 이병두, 김종성, 윤진환, 허규영, 진경식, 진상우
Department of Chemistry, School of Environ. Sci. & Eng., Pohang Accelerator Laboratory, Polymer Research Institute, and Division of Molecular & Life Sciences (BK21 Program), Postech,
Meso-, micro-, and nano-porous materials have recently attracted much interested due to their potential applications as low dielectric constant (low-k) interdielectrics, chemical and biological sensor membranes, catalyst supports, and gas separation membranes. In particular, low-k interdielectrics hve gained great attention from the microelectronics industry and end users because for integrated circuits (ICs) of multilayer structures low-k interdielectrics can lower line-to-line noise in interconnects and alleviate power dissipation issues by reducing the capacitance between the interconnect conductor lines. Further, low-k interdielectrics have advantages over low-resistivity metal conductors such as copper and silver, because apart from providing device speed improvements they also provide lower resistance-capacitance delay. Thus low-k interdielectric materials (k<<2.5) are in high demand in the microelectronics industry. Considering the industrial demands, low-k dielectrics have been developed at Postech for last ten years. The major achievements as well as the current status in the low-k materials development are discussed.

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