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  • 09월 04일 13시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

Synthesis and Characterization of Manganese Silicide Nanowires

등록일
2009년 8월 13일 20시 50분 32초
접수번호
0661
발표코드
34P94포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 <발표Ⅰ>
발표형식
포스터
발표분야
물리화학
저자 및
공동저자
서관용, 윤하나, 김봉수
KAIST 화학과, Korea
Transition metal silicides can be used as ohmic or schottky barrier contacts and low resistance interconnects in electronic devices. Compared with other metal silicides, chemical compositions of manganese silicides can vary more flexibly and thus manganese silicides are expected to possess richer physical properties. For example, MnSi~1.7 is semiconducting and a promising material for silicon-based optoelectronic devices as well as a thermoelectric material operating at high temperatures. Mn5Si3 and MnSi compounds are metallic in bulk and MnSi is ferromagnetic with a Curie temperature of 30 K, which may find application in the developing field of “spintronics”. Among the various manganese silicides, MnSi has attracted great interest because it continues to provide surprise in the area of metal physics. We report here synthesis of single-crystalline MnSi nanowires via a simple vapor transport method. Free-standing MnSi nanowires are grown on a Si substrate with no catalyst. We have studied the crystal structure of the MnSi nanowires. Transmission electron microscopy studies confirm the single crystalline nature of the simple cubic MnSi nanowires. The typical size of the MnSi nanowire is several micrometers in length and 70-150 nm in diameter.

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