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Reversible Oxidation-Reduction Process at Al/La1-xSrxMnO3 Interface: a Computational Study for Resistance Random Access Memory Applications

2009년 8월 14일 14시 28분 47초
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금 <발표Ⅳ>
저자 및
이노도, 장윤희1
광주과학기술원 신소재공학과, PIMS, Korea
1광주과학기술원 신소재공학, Korea
Metal/R1-xAxMnO3/Metal (Metal = Al and Ag; R = La and Pr; A = Ca and Sr) capacitor like structures are promising candidates for resistance random access memory (ReRAM) devices. The origin of the resistive switching phenomenon in such devices, however, is still controversial. The reversible oxidation and reduction of the metal electrode due to the oxygen migration between the perovskite oxide and the metal electrode is one of the hypotheses on the resistive switching mechanism. In order to validate this hypothesis, in our previous study, we studied on the component materials [Al, AlOx, LaMnO3, and La1-xSrxMnO3 (LSMO)] of a promising ReRAM device material (Al/LSMO). Based on the structures and properties of these materials, in the current study, we built up two models of the Al/LSMO interface (Model I with LaO-terminated LSMO and Model II with MnO2-terminated LSMO) and carried out density functional theory quantum mechanics calculations on their structure, energy, and electronic properties (total and partial density of states as well as I-V characteristics). The calculated energy barrier as well as the change in the density of states during the oxidation-reduction process indicates that the hypothesis is plausible especially at the interface between Al and MnO2-terminated LSMO (Model II). Calculations with the surface reconstruction taken into account are on the way.