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Wet-chemical deposition of CuInGaSe2 thin films for thin film photovoltaic device

등록일
2009년 8월 14일 16시 02분 11초
접수번호
1286
발표코드
39P316포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 <발표Ⅳ>
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
차지현, 장주연, 이종현, 손현영, 정덕영
성균관대학교 화학과, Korea
Non-vacuum technique is described for the fabrication of a CuInGaSe2(CIGS) absorber layer using solution precursor. The process was organized incorporation of metal and selenium, deposition of precursor and annealing as-deposited film, to form thin and dense CIGS films. The precursors containing Cu-, In-, Ga- and Se- related chemical were coated onto glass substrate by using the spin-casting method and then dried in air. The as-deposited layer showed amorphous Cu-In-Ga-Se phase, which were converted to chalcopyrite CIGS phase by heat treatment. Morphological, crystallographic and compositional analyses were performed at each step of the fabrication process by SEM, XRD and EDS. Hall measurement and electrical properties of CIGS thin film were investigated. Our facile method is expected to cost and fabrication time of CIGS thin film solar cells.

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