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  • 09월 04일 13시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

Development of CryoSAS for the quality control of low ppts level of impurities in solar cell by LT-FT-IR

등록일
2009년 9월 8일 13시 53분 27초
접수번호
1612
발표코드
목12E3심 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 15시 : 00분
발표형식
심포지엄
발표분야
분석화학 - New Frontiers in Analytical Chemistry
저자 및
공동저자
김효진
동덕여자대학교 약학대학, Korea
Semiconductor grade silicone now widely used for the solar cell are considered the puriest material known, nevertheless contains impurities at levels of sub ppts. Therefore determination of sub-ppts level of the shallow impurities such as B and P are major concern in production of single crystal solar cell industry. Shallow impurities in single crystal silicone were determined by low temperature far mid IR transmission spectroscopy (LT-FT-IR) and Photoluminescence (PL). Detection limits of B and P as well as other shallow impurities were obtained sub ppt level with liquid He cooled bolometer by LT-FT-IR. Recently, the closed cycled cryostat (CrySAS) to reduce the consumption of liquid He has been developed for the routine quality control of the solar cell industry.

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