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  • 03월 05일 13시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제105회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Fabrication of Surface Plasmon-Coupled Si Nanodots in Au-Peapod-Embedded Amorphous-Silicon-Rich-Oxide Nanowire

2010년 1월 30일 11시 22분 55초
금27H5구 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
금 15시 : 40분
물리화학 - 물리화학에서의 최근 연구
저자 및
권혁상, 박경수1, 김성근
서울대학교 화학부, Korea
1삼성종합기술원 AE 그룹, Korea
Interest in dielctric nanowires containing metal nanoparticle chains continues to grow owing to its potential applications in nanoscale optoelectronics. Simultaneous incorporation of both semiconductor and metal into nanomaterial results in highly desired properties such as local-field-enhanced light emission and improved photoconversion efficiency due to the surface plasmon resonance of metal nanoparticles. Methods of producing silicon oxide nanowires embedded with gold or gold silicide nanoparticle chains have been reported, but in this paper, we report a novel fabrication method for amorphous Si (a-Si) nanodots from gold-nanoparticle-embedded silicon oxide nanowires using irradiation of a low-intensity, parallel electron beam at room temperature. Thermal annealing at 823 K turns a-Si nanodots into and crystalline Si (c-Si) nanodots. Our method produces a high density of Si nanodots with a narrow size distribution, depending strongly on the morphology of gold particles. Characterization of the optical properties of Si nanodots in the vicinity of gold nanoparticles by monochromated electron energy-loss spectroscopy (EELS) reveals a marked enhancement. Furthermore, simple heat treatment at high temperature (1123 K) yields an unexpected Au/Si core-shell nanostructure in the silicon-rich oxide nanowire, with a corresponding plasmon peak redshift.