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  • 03월 10일 13시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제105회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Photocarrier Dynamics in Broadband Si:Ge Nanowire Photodetectors

등록일
2010년 3월 27일 13시 32분 43초
접수번호
1484
발표코드
목18G1심 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 13시 : 50분
발표형식
심포지엄
발표분야
재료화학 - 광전자 분야에서의 최신 재료화학 연구 동향
저자 및
공동저자
조문호
POSTECH, Korea
Si:Ge alloy semiconductor nanowires (NWs) offer challenging opportunities for integrated Si optoelectronics, since they potentially allow unprecedentedly strong light-matter interaction in the wavelength range of the optical communication.[1,2,3] Therein, optical and electrical properties of semiconductors at the nanometer regime manifest themselves to be strongly size-dependent, and such substantial variations have been intensively investigated as the central theme of nanoscience. Here we demonstrated a scanning photocurrent imaging technique particularly to investigate dynamics of photocarriers in individual Si:Ge NWs, by which it was spatially and spectrally resolved without ensemble average. Specifically, we show experimental demonstration of several NW optoelectronic devices, recently studied in our laboratory, where various Si:Ge NWs are functionally incorporated [4,5,6]. They will include Si:Ge NW photodetectors, intra NW p-n diodes and near-field plasmonic detectors, where the photogenerated carrier dynamics commonly size-dependent around the optical diffraction limit. References [1] Nano Lett. 6, 2679 (2006): [2] Adv. Mater. 20 1 (2008): [3] Appl. Phys. Lett. 92, 263111 (2008): [4] Nature Physics 5, 475 (2009): [5] Nano Lett. In Press (2010): [6] Submitted (2010).

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