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03월 07일 19시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능
제107회 대한화학회 학술발표회, 총회 및 기기전시회 안내
High performance inkjet-printed polymer based CMOS integrated circuits for a backplane of flexible displays
2011년 3월 9일 13시 49분 24초
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금 15시 : 00분
Advances in Information Display Technology : Materials and Processing
Solution processed conjugated molecules enable to manufacture low cost various electronic devices by unconventional patterning methods such as inkjet, screen, or gravure printing with high throughput. Although the organic field-effect transistors (OFETs) using conjugated molecules as an active layer are not suitable for electronics requiring high charge carrier mobility due to intrinsic limitation of those materials, the advantage in manufacturing processes make them ideal for large-area, flexible, transparent, and disposable electronic devices such as drivers for flexible or transparent displays, digital circuits for radio frequency identification (RFID) tags, sensors, and memories. Moreover, the charge carrier mobility of state-of-the-art organic semiconductors is comparable with amorphous silicon so that it is expected that many applications will be replaced by cost-effective solution processed OFETs in near future. To realize advanced integrated CMOS circuits, those p-channel or n-channel conjugated molecules must be patterned. However, conventional patterning process such as photolithography is not suitable since conjugated molecules are very weak under UV light illumination and cost of manufacturing facility is also very high. Therefore novel patterning methods have researched so far such as micro contact printing, inkjet printing. Among those novel patterning methods, inkjet has a variety of advantages such as removal of need for masks, which lead to cost-savings, efficient use of materials and waste elimination, non-contact deposition method (little contamination). Here we demonstrate high performance inkjet printed p-channel and n-channel top-gate/bottom-contact polymer field-effect transistors (FETs), and applications to elementary organic complementary inverter and ring oscillator circuits. We have obtained high field-effect mobility more than 0.3 cm
/Vs for both of p-channel and n-channel FETs, and the CMOS polymer ring oscillator showed very high operating frequency of 50 KHz. In addition, we achieve the high resolution inkjet printing method for gate line printing for top gated OFETs and integrated circuits.
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