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학술발표회초록보기

초록문의 abstract@kcsnet.or.kr

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  • 03월 02일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제109회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Solution-processed zinc tin oxide thin film semiconductors with semiconductor-insulator interlayer modifications

등록일
2012년 3월 2일 14시 56분 37초
접수번호
1569
발표코드
MAT.P-1219 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
4월 25일 (수요일) 18:00~21:00
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
손기철, 윤명한
광주과학기술원 신소재공학부, Korea
Conductive metal oxides have attracted much attention as active materials in transparent thin film transistors (TFTs) and transparent electrodes in LCD, LED and touch panel display. Unlike conventional thin-film fabricating methods such as chemical vapor deposition (CVD), pulse laser deposition (PLD) and sputtering, solution-based deposition method utilizing metal precursors has several advantages including film uniformity over large area, relatively low fabrication cost, low processing-temperature, and etc. Despite these advantages, there remain unsolved issues on poor adhesion and minority carrier formation at the interface between metal oxide and dielectric layers. In this study, we fabricated and characterized solution-processed zinc tin oxide (ZTO) TFTs by sol-gel process and embedded carbon nanostructures at the interface between semiconductor and gate insulator layers. We believe that this study will contribute to our understanding of the interfacial modification effect on metal-oxide TFT performance and development of high-performance metal-oxide TFTs via low-temperature solution-process.

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