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학술발표회초록보기

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  • 03월 02일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제109회 대한화학회 학술발표회, 총회 및 기기전시회 안내 A SIMS Study of Cu(InGa)Se22 (CIGS) Thin Films

등록일
2012년 3월 2일 16시 54분 26초
접수번호
1579
발표코드
ANAL.P-649 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
4월 25일 (수요일) 18:00~21:00
발표형식
포스터
발표분야
분석화학
저자 및
공동저자
임원철
한국과학기술연구원 특성분석센터, Korea
In these days, interesting novel applications in photovoltaics are focused on thin and flexible solar modules, especially in the fields of space, aeronautics, and mobile applications. Within the past years, many researchers have been studied the development of flexible and lightweight CIGS modules and especially the role of Na in CIGS films was frequently studied. However, CIGS thin films contain a little amount of Na like 0.1 %, so that depth profiles of Na in CIGS are so difficult to obtain by general analytical techniques. Dynamic SIMS has been widely used in an elemental analysis and a depth-profiling for a trace materials existed on the surface because it is highly sensitive enough to detect small amount of ions like ppm or ppb. There are many experimental conditions and factors to affect the SIMS depth profiling, such as primary ion, beam energy, surface roughness, position in the sample stage, and homogeneity of chemical composition of the sample, etc. Therefore, we evaluated Dynamic SIMS where it is a suitable quantitative analysis technique for thin layer mixed with homogeneous bulk material such as CIGS.

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