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학술발표회초록보기

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  • 09월 12일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제110회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Solution processed wide band-gap CuInGaS2 thin film for solar cell applications

등록일
2012년 8월 30일 14시 26분 24초
접수번호
1175
발표코드
MAT.P-1332 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 17일 (수요일) 16:00~19:00
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
박세진, 민병권1
고려대학교 화공생명공학과, Korea
1한국과학기술연구원 청정에너지연구센터, Korea
A wide band-gap (1.55 eV) CuInGaS2 thin film was prepared by a precursor solution based coating method. In order to eliminate carbon residue derived from organic binder and solvent, air annealing was applied. Subsequently, sulfurization was carried out for the formation of the CuInGaS2 alloy. The film was characterized by various analysis techniques including XRD, SEM, EPMA and AES. As a result, the film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is caused by the formation of Ga deficient CuInGaS2 crystallites. Although two distinct morphologies existed simultaneously on the surface, the film showed good device performance. Due to the wide band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (~787 mV) with a power conversion efficiency of 8.28 % under standard irradiation conditions.

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