KCS

Silicon nanowire (SiNW) have been synthesized using wet chemical etching of bulk silicon wafers (p-Si(100)) with a mask of silver nanoparticles that are deposited by wet electroless deposition. The etching of SiNWs is based on subsequent treatments in chemical solutions such as 0.04 M aqueous solutions of silver nitrate (AgNO3) followed by 5 M hydrofluoric acid and 30% hydrogen peroxide (H2O2). Graphene oxide was obtained by ball milling carried out in a ball-mill machine in the presence of graphite and stainless steel balls and followed by the modified Hummers’ process. Activated microwave-exfoliated graphite oxide (MEGO) was prepared and used for the composite materials of silicon nanowires and grapheme oxide via hydrosilylation. The silicon nanowire-graphene composite materials were characterized by XRD, TEM, and FE-SEM. A specific surface area (SSA) was measured by the Brunauer?Emmett?Teller (BET) method. Detailed information for the composite materials will be discussed. This research was financially supported by the Ministry of Education, Science Technology (MEST) and National Research Foundation of Korea(NRF) through the Human Resource Training Project for Regional Innovation