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  • 09월 06일 15시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제112회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Study of tunneling effect of 16-MHDA layers on gold substrate by using Self-Assembled mono- or multi-layer(s) method

등록일
2013년 9월 5일 14시 33분 12초
접수번호
1378
발표코드
ELEC.P-1179 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 16일 (수요일) 16:00~19:00
발표형식
포스터
발표분야
전기화학
저자 및
공동저자
Wang Wenxiu, 손용근1,*
성균관대학교 화학과, China
1성균관대학교 화학과, Korea
Organic thin film transistors (OTFT) are highly attractive for a mount of application, but one of the main problems with traditional OTFT is the high operating voltage is usually large, because of the poor capacitive coupling through the dielectric layers. Through decreasing the thickness of the insulating layer to reduce the supply voltage is one of the possible ways to make nanometer-scale FET. Fortunately using of self-assembled monolayer or multi-layers might solve this problem. In this paper the insulator which we studied is 16-mercaptohexadecanoic (16-MHDA) self-assembled multi-layers on gold wafer. These molecules are deemed to be insulating and also the tunneling current will decrease exponential with the increasing of molecule length. Many works have shown the electronic transport through molecules of alkanethiol (C8, C10, C12, C16 etc.) however in these studies only molecular monolayer was studied, it was too thin to avoid the tunneling current. Here we have used 16-MHDA self-assembled mono- and multi-layers on gold surface to discover the dielectric characters and the critical thickness of the 16-MHDA layers. This work was supported the Energy & Resource Recycling of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No.2010501010002B)

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