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학술발표회초록보기

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  • 02월 20일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제113회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Bandgap of AgInS2 Ⅰ-Ⅲ-Ⅵ semiconductor quantum dot

등록일
2014년 2월 18일 19시 55분 42초
접수번호
1272
발표코드
PHYS.P-426 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
4월 16일 (수요일) 16:00~19:00
발표형식
포스터
발표분야
물리화학
저자 및
공동저자
박용진, 송재규*
경희대학교 화학과, Korea
Semiconductor quantum dots (QDs) have potential for application to electronic device, light emitting diodes (LED), solar cell, and photocatalysis because of their unique electronic and optical properties. II-VI Semiconductor QDs are well developed for these applications. However, II-VI semiconductor QDs include toxic heavy metals such as Cd, Pb, Hg, Se. Therefore, semiconductor QDs with nontoxic element are required. In this regard I-III-VI type semiconductor QDs such as CuInS2, AgInS2, and AgGaS2 have been studied for alternatives of II-VI semiconductor QDs. When we studied the defect emission of AgInS2 QDs, we observed unexpected emission around 500 nm reproducibly. So we investigated the origin of this emission. In time-integrated photoluminescence (TIPL) spectra, the emission around 500 nm was deconvoluted by two species (480 nm, 509 nm), which are explained by crystal-field splitting. And we found that these species have different lifetimes. The time decay profiles of the emission were fitted by triexponential model. These liftetimes were distinguished from those of the defect emission. Therefore we suggested that the emission around 500 nm is the bandgap emission of AgInS2.

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