abs

학술발표회초록보기

초록문의 abstract@kcsnet.or.kr

결제문의 member@kcsnet.or.kr

현재 가능한 작업은 아래와 같습니다.
  • 02월 20일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제113회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Controlled Growth of In-plane Heterostructure of Graphene and Hexagonal Boron Nitride on Platinum

등록일
2014년 2월 20일 12시 36분 26초
접수번호
1335
발표코드
MAT.P-1068 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
4월 16일 (수요일) 16:00~19:00
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
김광우, 신현석1,*
울산과학기술대학교(UNIST) 친환경에너지공학부, Korea
1울산과학기술대학교(UNIST) 에너지공학부, Korea
The lateral heterostructure of hybridized graphene and hexagonal boron nitride (h-BN) has attracted particular attention in research of two dimensional (2D) materials. However, the control of the interface formation in the heterostructure is one of great challenges in 2D materials. Recently, patterned regrowth method has been attempted for the controlled synthesis of lateral junctions between graphene and h-BN. However, many fundamental understandings are still not clear, including the in-plane atomic continuity as well as the edge structure of graphene.
In this presentation, we report lateral heterostructures of hybridized graphene and h-BN by the chemical vapor deposition (CVD) method. The lateral heterostructures were grown by using Pt foil as the substrate and ammonia borane and methane gas as precursors. The heterostruture grown on Pt foil could be successfully transferred onto an arbitrary substrate via an electrochemical bubbling-based method. Thus, the interface formation of the heterostructures was investigated by Raman spectroscopy, scanning tunneling microscopy, and high-resolution transmission electron microscopy (HR-TEM).

상단으로