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학술발표회초록보기

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  • 02월 20일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제113회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Unique properties of semiconducting two-dimensional crystals

등록일
2014년 2월 24일 16시 53분 39초
접수번호
1432
발표코드
MAT2-4 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 15시 : 20분
발표형식
심포지엄
발표분야
재료화학 - Two-Dimensional Materials: Graphene, Transition Metal Dichalcogenides, and Others II
저자 및
공동저자
Goki Eda
Department of Physics/Chemistry, National University of Singapore Graphene Research Centre, National University of Singapore, Singapore
※ 국외소속으로 등록된 저자의 승인여부는 최소 3일이내 발표자 email로 알려드립니다.
승인 1건
Semiconducting two-dimensional (2D) crystals derived from layered transition metal dichalcogenides (TMD) are attractive building blocks for novel electronic and optoelectronic devices [1,2]. In this talk, I will discuss the electronic properties of group 6 TMD 2D crystals based on charge transport and photoluminescence (PL) spectroscopy studies.
A single layer MoS2 is a direct gap semiconductor in striking contrast to its indirect gap bulk counterpart [3]. As a result, single layer MoS2 exhibits distinct band gap PL. We have shown that mono- to few-layer WS2 and WSe2 that their band structure undergoes the same indirect-to-direct gap transition at the limit of a single monolayer [4]. Based on temperature-dependent PL spectroscopy, we further reveal subtle but fundamental differences in the conduction band structure of few-layer MoS2, WS2, and WSe2. Specifically, the effect of thermally modulated band structure on the recombination of indirect excitons will be discussed [5]. We further demonstrate using PL excitation spectroscopy that band nesting has a unique effect on the relaxation pathway of photoexcited carriers.
I will also discuss about the recent success in the growth of monolayer TMDs via chemical vapor deposition (CVD) and our recent findings on the electronic quality of CVD MoS2 monolayer thin films through charge transport studies. I will discuss our current understanding on the factors limiting carrier mobility in these materials.
References
[1] Wang et al., Nat. Nanotechnol. 2012, 7, 699. [2] Chhowalla et al. Nat. Chem. 2013, 5, 263. [3] Mak et al. Phys. Rev. Lett. 2010, 105, 136805. [4] Zhao et al. ACS Nano 2013, 7, 791. [5] Zhao et al. Nano Lett. 2013, 13, 5627.

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