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  • 02월 20일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제113회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Simple Bar-Coating Process for Large-Area, High-Performance Organic Field-Effect Transistors and Ambipolar Complementary Integrated Circuits

등록일
2014년 3월 10일 16시 10분 24초
접수번호
1448
발표코드
KCS4-4 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 10시 : 55분
발표형식
심포지엄
발표분야
한국다우케미칼 어워드 수상자 구두발표
저자 및
공동저자
김동윤, 한현1, 백강준2, 김주환, 곽선우1, 김동유*, 노용영1,*
광주과학기술원(GIST) 신소재공학과, 히거신소재연구센터, Korea
1동국대학교 융합에너지신소재공학과, Korea
2한국전기연구원 나노융합기술연구센터, Korea

We report a large-area, simple wire-bar?coating process as a suitable method for deposition of conjugated and insulating polymer films in OFET arrays and complementary ICs. The highly crystalline polymer semiconductor, PTVPhI-Eh, showed better crystalline morphology and the amorphous polymer semiconductor, (MEH-PPV) or PMMA, exhibited smoother film morphology when applied via the bar-coating process than by the spin-coating process. The best bar-coated OFETs with DPPT-TT showed a charge carrier mobility as high as 2.83 cm2 V-1 s-1 and excellent device-to-device performance uniformity with standard deviation of 0.05~0.06 in 4 inch transistor arrays. Finally, we fabricated bar-coated ambipolar CMOS inverters (voltage gain >40) and ring oscillators (ROs) (oscillation frequency (fosc) of ~25 KHz) with a PTVPhI-Eh and CsF interlayer. We believe that this simple printing method is not only very effective for producing high performance device and circuits, but also highly compatible with roll-to-roll continuous manufacturing processes, which will enable fully printed large-area electronic and optoelectronic devices.

Figure. 1 (a) Top-surface AFM images of the PTVPhI-Eh semiconductor thin fi lms deposited using (a) spin-coating and (b) bar-coating methods. (c) Schematic description of the bar-coating process. (d) Digital camera images of the bar-coated PTVPhI-Eh OFET array on a large size (10 cm × 10 cm)


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