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학술발표회초록보기

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제114회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Fabrication and Characterization of PZT Thin Film with RF Magnetron Co-sputtering at Various O2 Gas Ratio

등록일
2014년 8월 23일 16시 47분 36초
접수번호
0133
발표코드
ANAL.P-497 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 15일 (수요일) 16:00~19:00
발표형식
포스터
발표분야
분석화학
저자 및
공동저자
최수진, 정은강, 강용철*
부경대학교 화학과, Korea
Lead zirconate titanate (PZT) is significant material in electrical and optical devices for their ferroelectric, piezoelectric and dielectric properties. In this research, PZT films were fabricated by reactive RF magnetron co-sputtering method by using metallic lead, zirconium and titanium targets at various O2 gas ratio and post-annealing treatment. And the O2 gas was used for reactive gas and Ar gas was used for sputter gas and the deposited PZT films were annealed at 723, 823, 923 and 1023 K for 2 h in ambient atmosphere. The deposited PZT films were investigated the change of chemical environment, morphology and electrical properties with respect to O2 gas ratio and annealing temperature. By proceeding depth profile, the composition of PZT was investigated from surface to bulk. At XPS spectra, oxidation states of lead, zirconium and titanium were depending on O2 gas ratio. And the thickness of PZT films was measured with surface profiler and the thickness decreased when O2 gas included with reactive gas. After oxygen gas was introduced, the thickness of the PZT films did not depend on O2 gas ratio. And the resistivity of PZT thin films was increased and the conductivity was decreased.

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