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제114회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Investigation of molybdenum nitride thin films deposited by reactive r.f. magnetron sputtering at various nitrogen ratio

등록일
2014년 8월 23일 18시 43분 57초
접수번호
0135
발표코드
ANAL.P-498 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 15일 (수요일) 16:00~19:00
발표형식
포스터
발표분야
분석화학
저자 및
공동저자
정은강, 최수진, 강용철*
부경대학교 화학과, Korea
Molybdenum nitride (MoNx) thin films were deposited on p-type Si(100) wafer by reactive r.f. magnetron sputtering at various nitrogen gas ratio in ultra high vacuum (UHV) chamber. Surface properties of MoNx thin films were investigated by alpha step measurement, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and 4-point probe measurement. Thickness of MoNx thin films was decreased from 180 to 20 nm with increasing nitrogen gas ratio measured by alpha step measurement. The structure of MoNx thin films was γ-Mo2N phase assigned by XRD. Mo and nitrogen species were confirmed by deconvolution of high resolution XPS spectra of Mo 3d, Mo 3p and N 1s. And conductivity of MoNx thin films was increased after nitrogen gas involved in the sputter gas.

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