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학술발표회초록보기

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  • 02월 26일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제115회 대한화학회 학술발표회, 총회 및 기기전시회 안내 H-terminated and HO-terminated Silicon Quantum Dots Showing an Extraordinary High Quantum Yield

등록일
2015년 2월 26일 15시 59분 05초
접수번호
1490
발표코드
MAT.P-1182 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
4월 15일 (수요일) 16:00~19:00
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
조보민, 손홍래*
조선대학교 화학과, Korea
Photoluminescence properties and surface morphologies of porous silicon were investigated by controlling of etching times and applied current densities. FE-SEM image of porous silicon surface indicated that the porous silicon prepared at currents below 200 mA/cm2 exhibited very stable and even surface. However the porous silicon prepared at currents above 300 mA/cm2 displayed the cracked surface of porous silicon. This cracked surface was collapsed to give cracked domains at currents over 500 mA/cm2. Photoluminescence of porous silicon was investigated by controlling of etching times and applied current densities in the range from 50 sec. to 900 sec. and from 50 mA/cm2 to 800 mA/cm2, respectively. Photoluminescence intensity of porous silicon increased gradually during etching process, reached maximum, and then decreased as the etching time increased. Porous silicon showed the best photoluminescence efficiency was prepared at currents of 200 mA/cm2 and etching time of 300 sec. Silicon quantum dots were obtained from the as-prepared porous silicon by using ultrasono-method. Quantum yields for the H-terminated and HO-terminated silicon quantum dots were measured and extraordinary high quantum yields for both silicon quantum dots were obtained. This research was supported by Agency for Defense Development. This work was supported by the Human Resource Training Program for Regional Innovation through the Ministry of Education and National Research Foundation of Korea (NRF-2012H1B8A2026282)

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