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학술발표회초록보기

초록문의 abstract@kcsnet.or.kr

결제문의 member@kcsnet.or.kr

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  • 09월 08일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제116회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Organic Thin-Film Transistors with Low Temperature Cross-Linked Polymers as Dielectric Layer

등록일
2015년 8월 27일 14시 12분 47초
접수번호
0713
발표코드
POLY.O-3 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 09시 : 30분
발표형식
구두발표
발표분야
고분자화학 - Oral Presentation for Young Polymer Scientists
저자 및
공동저자
하종운, 황도훈*
부산대학교 화학과, Korea

A potential gate dielectric material that can be cured and processed at low temperatures was designed and synthesized via the cross-linking of bisphenol A novolac (Novolac) and hexamethoxymethylmelamine (HMMM) in the presence of a catalytic amount of p-toluenesulfonic acid. The thin films of the prepared insulator, Novolac-MM, were completely solidified after cross-linking at 100 °C. Metal-insulator-metal (MIM) devices and pentacene-based p-type organic thin-film transistors (OTFTs) using the synthesized polymer as a dielectric layer were fabricated and compared to poly(vinylphenol)-based materials. Novolac-MM devices showed low leakage current (<10?8 A/cm2) and higher hole mobility (0.31 cm2/Vs) than PVP devices (0.23 cm2/Vs). Flexible OTFTs using Novolac-MM were also fabricated, and were found to be processable at low temperatures.


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