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제116회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Large-scale growth of two-dimensional transition metal dichalcogenides atomic layers using surface-alloy-mediated chemical vapor deposition

등록일
2015년 9월 2일 21시 10분 57초
접수번호
1162
발표코드
INOR.P-123 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 15일 (목요일) 11:00~12:30
발표형식
포스터
발표분야
무기화학
저자 및
공동저자
송인택, 박치범1, 최희철*
포항공과대학교(POSTECH) 화학과, 기초과학연구원 CALDES, Korea
1기초과학연구원 CALDES, Korea
Transition metal dichalcogenides (TMD) atomic layers have been one of the most intriguing materials for researchers in recent years. While the bulk is just an indirect gap semiconductor, their two-dimensional nanosheets are direct-gap semiconductors with fascinating applicability to nanoelectronics. The real application of these materials require the achievement of uniformly large-scale material for mass production. Herein, we demonstrated growth of MoS2 atomic layers, a well-known TMD, by using Au substrate, on which volatile Mo precursors form Mo-Au surface alloy, an atomically thin reservoir of Mo. Treatment of the surface alloy with sulfur-containing precursors further convert it into atomic layers of MoS2. A number of methods, including Raman spectroscopy and transmission electron microscopy, have confirmed the formation of atomic layers. In addition, for the first time, patterned growth of the atomic layers was achieved by using pre-patterned gold film. We further demonstrated the growth of WS2 atomic layers as well.

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