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제116회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Position Controlled Growth of C60 Single Crystals for Superconducting Devices

등록일
2015년 9월 3일 00시 15분 05초
접수번호
1168
발표코드
INOR.P-127 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 15일 (목요일) 11:00~12:30
발표형식
포스터
발표분야
무기화학
저자 및
공동저자
이진호, 박치범1, 최희철*
포항공과대학교(POSTECH) 화학과, 기초과학연구원 CALDES, Korea
1기초과학연구원 CALDES, Korea
It is important issue to place organic single crystals at the desired position on a substrate not only for optoelectronic applications but also for fundamental studies. To achieve this goal, researchers have recently developed some methods to control the position of organic crystals. However, most of them are inefficient or unsuitable to fabricate optoelectronic devices. Here, we present a simple but efficient method to grow morphologically well-defined fullerene single crystals on specific position of solid substrates, which enables extended study on unique physical properties, especially on superconductivity. By patterning C60 seeds and using solvent vapor annealing (SVA) process, we successfully fabricate the C60 single crystal devices on the bottom contact electrodes. This allows us to monitor the change in Raman signal and conductivity simultaneously during alkali metal doping. The temperature-dependent resistivity results confirms that the alkali metal doped fullerene single crystal is superconducting with higher critical temperature (TC) than that of polycrystalline thin film devices and it is metallic above critical temperature. These results provide promising approach for the discovery of new organic superconductor as well as practical applications such as organic field effect transistor.

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