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  • 03월 02일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제117회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Novel Zinc Precursors for Zinc Oxide Film

등록일
2016년 2월 25일 15시 54분 15초
접수번호
2011
발표코드
INOR.P-118 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
4월 22일 (금요일) 13:00~14:30
발표형식
포스터
발표분야
무기화학
저자 및
공동저자
한성호, 박보근1, 김창균1, 정택모2,*, 손성욱
성균관대학교 화학과, Korea
1한국화학연구원 화학소재연구본부, Korea
2한국화학연구원 화학소재연구본부 박막재료연구센터, Korea
Zinc oxide (ZnO) is an important material in the field of semiconductor because it has wide band gap of 3.37 eV. This semiconductor material possesses interesting properties such as optical, electrical, piezoelectrical, and photoconducting. In addition, this material is chemically and thermally stable, and environmental friendly. Recently, ZnO has been extensively studied for various potential applications, such as gas sensors, photodetectors, light-emitting diodes, laser system, solar cells, and transisters. Also transparent ZnO thin films can substitute for expensive tin-doped In2O3 in displays and transducers. Generally, alkyl zinc such as dimethyl zinc and diethyl zinc are widely used as precursors in CVD for large scale coating of ZnO. Both compounds are pyrophoric and react violently with air, water, or alcohol even at low temperature. To overcome this disadvantage, we have synthesized novel zinc complexes using diethyl zinc as potential precursors. The resulted complexes were characterized various analysis equipments such as nuclear magnetic resonance (NMR), elemental analyses (EA), thermogravimetric analysis (TGA), and single crystal X-ray diffraction.

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