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제118회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Fabrication of Nickel Sulfide(NiS) Thin Films using Atomic Layer Deposition as Low Cost Counter Electrodes for Pt-Free Dye-Sensitized Solar Cells

등록일
2016년 8월 31일 20시 20분 10초
접수번호
2290
발표코드
MAT.P-620 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 14일 (금요일) 11:00~12:30
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
정진원, 김홍범1, 성명모1,*
한양대학교 자연과학대학 화학과, Korea
1한양대학교 화학과, Korea
Dye-sensitized solar cells (DSCs) are promising candidates for light-to-energy conversion devices due to their low-cost, easy fabrication and relative high conversion efficiency. An important component of DSCs is counter electrode (CE) collect electrons from extrernal circuit and reduct I3- to I-. The conventional CEs are thermally decomposed Pt on fluorine-doped tin oxide (FTO) glass substrates, which have shown excellent performance and stability. However, Pt is not suitable in terms of cost effect. In this report, we demonstrated that nickel sulfide thin films by atomic layer deposition (ALD)-using Nickel(1-dimethylamino-2-methyl-2-butanolate)2 and hydrogen sulfide at low temperatures of 90-200 °C—could be good CEs in DSCs. Notably, ALD allows the thin films to grow with good reproducibility, precise thickness control and excellent conformality at the angstrom or monolayer level. The nickel sulfide films were characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, hall measurements and cyclic voltammetry. The ALD grown nickel sulfide thin films showed high catalytic activity for the reduction of I3- to I- in DSC. The DSCs with the ALD-grown nickel sulfide thin films as CEs showed the solar cell efficiency of 7.12% which is comparable to that of the DSC with conventional Pt coated counter electrode (7.63%).

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