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  • 09월 05일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제120회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Cobalt silicide nanowires based high-performance microsupercapacitors

등록일
2017년 8월 24일 00시 10분 02초
접수번호
1362
발표코드
ELEC.P-468 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 20일 (금요일) 13:00~14:30
발표형식
포스터
발표분야
Electrochemistry
저자 및
공동저자
Hana Yoon*, Bongsoo Kim1,*
Separation and Conversion Materials Research, Korea Institute of Energy Research, Korea
1Department of Chemistry, Korea Advanced Institute of Science and Technology, Korea
The effectiveness of cobalt silicide nanowires grown on silicon substrate by chemical vapor deposition method as electrode material for micro-supercapacitors has been investigated. The as-synthesized cobalt silicide nanowires densely cover the silicon substrate and have small diameters of 40-70 nm. They showed the crystal structures and chemical composition of cobalt-rich silicides (Co3Si, Co2Si). Electrochemical measurements showed that the cobalt silicide nanowires exhibit high areal capacitance and good rate capability. The cobalt silicide nanowires grown on silicon substrates present many advantages for supercapacitor application, including high surface area, low resistivity, and good mechanical adhesion with the silicon substrate showing great promise for applications in micro-supercapacitors.

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