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제120회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Photochemical Etching of InP Quantum Dots

등록일
2017년 8월 31일 16시 27분 51초
접수번호
2437
발표코드
PHYS.P-231 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 20일 (금요일) 13:00~14:30
발표형식
포스터
발표분야
Physical Chemistry
저자 및
공동저자
Hwajun Jeong, Seungtaek Rim, Seung Koo Shin*
Department of Chemistry, Pohang University of Science and Technology, Korea
Quantum dots (QDs) prepared by colloidal synthesis usually show a monodisperse but wide size distribution that results in a rather broad emission spectrum. To reduce the emission band width and to tune the emission color, we carried out the photochemical etching of InP QDs. InP QDs were synthesized by a one-pot process and the photochemical etching of as-synthesized InP QDs was performed in chloroform by using a high power 532 nm laser. Photochemical etching processes were monitored by absorption and emission spectroscopy. After photoirradiation, the band-edge wavelength was shifted to blue, indicating the reduction in quantum size. The rate of etching varied with additives. After reducing the size by photochemical etching, resulting InP QDs were overcoated with a layer of ZnS shell, and their optical properties were characterized. The photochemical etching of compound semiconductor QDs is a useful tool to overcome the batch-to-batch variation in colloidal growth processes.

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