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  • 02월 19일 10시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제121회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Novel Tin Precursors for Atomic Layer Deposition of Tin Oxide Thin Films

2018년 1월 25일 11시 24분 51초
INOR.P-25 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
4월 19일 (목요일) 11:00~12:30
Inorganic Chemistry
저자 및
Seong Ho Han, Chang-Gyoun Kim1, Bo Keun Park2, TAEK-MO CHUNG3,*
Department of Chemistry, Sungkyunkwan University, Korea
1Chemical Materials Division, Korea Research Institute of Chemical Technology, Korea
2Center for Thin Film Materials, Korea Research Institute of Chemical Technology, Korea
3Chemical Materials Division Center for Thin Film M, Korea Research Institute of Chemical Technology, Korea
Oxide semiconductor materials have attracted considerable interest over the past decade as ideal candidates for thin film transistors (TFTs), gas sensors, lithium batteries, and solar cells and various other applications. In particular, p-type tin(II) monoxide (SnO), is regarded as an important material in electronics owing to its wide optical band gap energy (2.7-3.0 eV), highlighting the possibility of completely transparent electronic devices. Moreover, SnO based TFTs currently hold the record field effect mobility of ~6.75 cm2/V∙s and Hall mobility of ~18.71 cm2/V∙s. On the other hand, n-type tin(IV) dioxide (SnO2) with a bandgap of ~3.6 eV, excellent optical, electrical, and chemical properties is a derivative of SnOx. SnO2 is transparent under visible light and its resistivity can vary over a wide range. Doped SnO2 films can also be applied as transparent conducting electrodes in photovoltaic cells. Generally, chemical vapor deposition (CVD) and atomic layer deposition (ALD) are required for uniform and conformal thin film growth. In these methods, the most important thing is the precursor because the deposition process can be changed by precursors. Herein, we synthesized novel tin complexes as potential precursors for ALD. The resulted complexes were characterized by various analysis equipments such as nuclear magnetic resonance (NMR), elemental analyses (EA), thermogravimetric analysis (TGA), and single crystal X-ray diffraction.