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  • 02월 19일 10시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

대한화학회 제121회 학술발표회 및 총회 Synthesis of manganese nitride precursors

2018년 2월 3일 17시 02분 57초
INOR.P-55 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
4월 19일 (목요일) 11:00~12:30
Inorganic Chemistry
저자 및
SUN JU LEE, Bo Keun Park1,*, TAEK-MO CHUNG2,*, Chang-Gyoun Kim3
Center for Thin Film Materials, Kora Research institue of Chemical Technology, Korea
1Center for Thin Film Materials, Korea Research Institute of Chemical Technology, Korea
2Chemical Materials Division Center for Thin Film M, Korea Research Institute of Chemical Technology, Korea
3Chemical Materials Division, Korea Research Institute of Chemical Technology, Korea
Manganese nitride can be used for various applications such as catalyst, battery, memory device, display and sensors. Manganese nitride flims are deposited by several methods such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition. Especially, ALD method is useful to make thin films to use metal precursor (organometallic compound) having high volatility, thermal stability and high reactivity with reactants. Precursors for manganese nitride thin film are Mn(amidinate)2, Mn(guanidinate)2, Mn(β-diketiminate)2, etc. However, the precursors have some issue such as volatility, thermal stability, and reactivity. Herein, we report the synthesis of new heteroleptic precursors containing aminoalkoxide for thin films containing manganese. Prepared compounds were fully characterized by IR, thermogravimetric analyses (TGA), microanalyses, and structural analysis through single-crystal X-ray diffraction study.