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  • 02월 19일 10시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

대한화학회 제121회 학술발표회 및 총회 Bandgap Engineering of 2H-MoS2 by Electrochemical Surface Modification

2018년 2월 6일 13시 39분 31초
INOR.P-77 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
4월 19일 (목요일) 11:00~12:30
Inorganic Chemistry
저자 및
Younghee Park, Seunghyun Shin, Hyunseob Lim*
Department of Chemistry, Chonnam National University, Korea

Two-dimension materials such as graphene, hexagonal boron nitride and transition metal dichalcogenides (TMD) have lots of advantages for various applications due to their two-dimensional (2D) geometric structure. Among them, 2D-TMD materials, has attracted great attention as an alternative to graphene, since it has semiconducting properties while graphene has metallic properties. Thus, it cannot also be used in electronic applications, but also in optical and optoelectronic applications. Although single layer MoS2 has a bandgap of ~1.8 eV, the modulation of its bandgap is further required to absorb or emit the wider range of light. Surface modification is one of approaches, but the one-step functionalization on 2H-TMDs has been known to be difficult, while various reactions on 1T-TMDs have been demonstrated. The origin of the limitation is attributed to the difficulty of electron transfer from 2H-TMD to reacting molecules due to its semiconducting property and neutral charge state, which is a prerequisite process for the surface functionalization. Herein, we present the novel approach facilitating the direct surface functionalization of 4-bromobenzene diazonium tetraborate (4BBDT) on 2H-MoS2, one of TMD materials, by electrochemical process. The successful functionalization was confirmed by Atomic force microscopy, Raman spectroscopy and spatially resolved X-ray photoelectron spectroscopy (XPS) combined with Scanning photoelectron microscopy (SPEM). The widened bandgap of modified 2H-MoS2 was also confirmed by Photoluminescence spectroscopy (PL).