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제121회 대한화학회 학술발표회, 총회 및 기기전시회 안내 The electrical properties of gallium phosphide nanowires studied by conductive atomic force microscopy

2018년 2월 13일 11시 11분 26초
MAT.P-543 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
4월 20일 (금요일) 11:00~12:30
Material Chemistry
저자 및
Jung Ah Lee, Kidong Park1, Jinha Lee2, KIM DOYEON, jeunghee park*
Department of Materials Chemistry, Korea University, Korea
1Micro Device Engineering / Microdevices, Korea University, Korea
2Micro Device Engineering / Semiconductor Device, Korea University, Korea
Electronic transport properties of gallium phosphide (GaP) nanowire devices were studied by a conductive atomic force microscopy (C-AFM). In this work, the GaP NWs were synthesized by chemical vapor deposition and their crystal structure were determined from X-ray diffraction, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy. For the device fabrication with a sandwiched structure of (PtIr tip)-(Pt-coated nanostructure)-(Au electrode), the alignment of the GaP NW between patterned Au electrodes was accomplished by dielectrophoresis. The electrical contacts between the GaP NW and Au electrodes were formed by focused ion beam assisted Pt deposition. During the C-AFM based measurement, PtIr tip and Au electrode were used as a movable top electrode and bottom electrode, respectively. The electrical characteristics of each device were measured at room temperature and in air. The I-V curves for the GaP NW devices were analyzed in the aspect of a Schottky contact behavior.