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  • 02월 19일 10시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제121회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Enhancement of the Optical Properties of InGaN-Based Nanorod Light-Emitting Diodes using Electrodeposition from a Water/Ethanol Mixture Solution

2018년 2월 13일 16시 40분 27초
INOR.P-212 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
4월 19일 (목요일) 11:00~12:30
Inorganic Chemistry
저자 및
Yun Jae Eo, Gang Yeol Yoo1, Young Kwon Jang, Byungju Lee, HEEJOON KANG, Woong Kim1, YOUNG RAG DO*
Department of Chemistry, Kookmin University, Korea
1Department of Advanced Materials Engineering, Korea University, Korea
In this study, we fabricated one-dimensional (1D) nanorod light-emitting diodes (LEDs) from epitaxially grown LED structures on patterned sapphire substrates. In order to fabricate individually separated GaN-based 1D nanorod LEDs, we used nanosphere lithography (NSL), reactive ion etching (RIE) and inductively coupled plasma (ICP) etching processes. We also produced green-emitting devices configured with these nanorod LEDs by a dielectrophoresis (DEP) assembly method on pre-patterned metal electrodes. The newly produced green LED devices had inferior optical properties, including the luminance, due to the poor interconnections between the aligned nanorod LEDs and the electrodes. To solve these problems, we utilized an electrodeposition process with the devices. The electrodeposition process uses a HAuCl4 aqueous solution with ethanol added to adjust the current under a constant voltage condition. As a result, the optical properties of the novel green LED device were improved, and we could confirm the feasibility of these devices for use in planar surface LED applications such as displays and lightings.