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  • 02월 19일 10시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능
대회명 대한화학회 제121회 학술발표회 및 총회
등록일 2018년 3월 12일 15시 53분 52초
접수번호 6638
발표코드 KCS.O-7 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간 목 11시 : 03분
발표형식 구두발표
발표분야 KCS - Oral Presentation for 2018 DOW Chemical Korea Award
저자 및 공동저자 Eunho Lee, Seung Goo Lee, Hyo Chan Lee, Mankyu Jo, Min Seok Yoo, Kilwon Cho*
Department of Chemical Engineering, Pohang University of Science and Technology, Korea
제목 Direct Growth of Highly Stable Patterned Graphene on Target Substrates Using UV/Ozone-Pretreated Solid Carbon Source
내용 Graphene, one of the allotropes of carbon, has widely received much attention because it has outstanding properties such as optical, electrical, and mechanical properties. For applying various applications, graphene should be transferred to the target substrate, the significant defects (e.g., cracks and wrinkles), however, have been inevitably generated at this stage. It significantly limited to the various potential applications. In this presentation, a novel method is described for the direct growth of patterned graphene on dielectric substrates by chemical vapor deposition (CVD) in the presence of Cu vapor and using a solid carbon source, 1,2,3,4-tetraphenylnapthalene (TPN), as the precursor. The UV/Ozone treatment of the TPN film both crosslinks TPN and results in a strong interaction between the substrate and the TPN that prevents complete sublimation of the carbon source from the substrate during CVD. Substrate-adhered crosslinked TPN is successfully converted to graphene on the substrate without any organic contamination. The graphene synthesized by this method shows excellent mechanical and chemical stability. This process also enables the simultaneous patterning of graphene materials, which can thus be used as transparent electrodes for electronic devices. The proposed method for the synthesis directly on substrates of patterned graphene is expected to have wide applications in organic and soft hybrid electronics.
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