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제122회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Synthesis of Polytypic GaP and GaAs Nanowires and Application as Photodetectors

등록일
2018년 8월 16일 22시 00분 03초
접수번호
0279
발표코드
MAT.P-334 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 18일 (목요일) 11:00~12:30
발표형식
포스터
발표분야
Material Chemistry
저자 및
공동저자
Jinha Lee, Kidong Park1, Kim Doyeon2, Jaemin Seo2, Jeunghee Park2,*
Micro Device Engineering / Semiconductor Device, Korea University, Korea
1Micro Device Engineering / Microdevices, Korea University, Korea
2Department of Materials Chemistry, Korea University, Korea
One-dimensional semiconductor nanowires often contain polytypic structures owing to the co-existence of different crystal phase. Therefore, the understanding the properties of polytypic structures is of paramount importance for many promising applications in high-performance nanodevice. Herein, we synthesized typical III-V semiconductors, gallium phosphide (GaP) and gallium arsenide (GaAs), nanowires with zinc blende phase using the chemical vapor transport method. The growth direction ([111] and [211]) was controlled by the growth condition such as hydrogen gas flow. Various typed polytypic structures were produced simultaneously in a controlled manner. Nanobeam electron diffraction technique was employed to obtain strain mapping of the nanowires, which visualizes the polytypic structures along the [111] direction. We collected micro-Raman spectrum for individual nanowire, confirming the presence of hexagonal wurtzite phase in the polytypic nanowires. Further, we fabricated photodetectors using single nanowire, showing that the polytypic structures can decrease the photosensitivity. Our systematic analysis provides important insight into polytypic structures of nanowires.

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