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제122회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Two-Dimensional GeAs with Visible Range Band Gap

등록일
2018년 8월 16일 22시 00분 49초
접수번호
0283
발표코드
MAT.P-337 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 18일 (목요일) 11:00~12:30
발표형식
포스터
발표분야
Material Chemistry
저자 및
공동저자
Kim Doyeon, Jeunghee Park*, Jinha Lee1,*, Ik Seon Kwon2,*, InHye Kwak2,*, Kidong Park2,*, SuYoung Lee3,*
Department of Materials Chemistry, Korea University, Korea
1Micro Device Engineering / Semiconductor Device, Korea University, Korea
2Micro Device Engineering / Microdevices, Korea University, Korea
3Deapartment Green Energy Engineering, Hoseo University, Korea
Two-dimensional (2D) layered structures have recently drawn worldwide attention because of their intriguing optical and electrical properties. In this study, we prepared GeAs nanosheets as a new 2D material by a liquid-phase exfoliation method. The few-layered nanosheets had a band gap close to 2.1 eV, which is significantly higher (by about 1.5 eV) compared to the bulk. The value of 2.1 eV is in excellent agreement with that for the monolayer obtained from first-principles (HSE-06) calculations; mono-, bi-, and tri-, and tetralayers have remarkably direct or quasi direct band gap of 2.125, 1.339, 1.112, and 1.017 eV, respectively. The electrical properties of individual GeAs nanosheets were measured to reveal the 2D carrier transport behaviors. We also observed stable and large photocurrents, indicating potential application in high-performance optoelectronic nanodevices. The few-layered GeAs nanosheets deposited on n-type Si nanowire arrays showed promising photoelectrochemical water splitting under visible light irradiation. Band alignment based on the calculated band edge positions suggested a buildup of the space charge region in the p-GeAs/n-Si heterojunction, as well as the band bending of n-Si at the electrolyte interface

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