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제122회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Strain Mapping of Bent III-V Semiconductor Nanowires

2018년 8월 16일 22시 00분 46초
MAT.P-338 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
10월 18일 (목요일) 11:00~12:30
Material Chemistry
저자 및
Jaemin Seo, Jeunghee Park*, Kidong Park1
Department of Materials Chemistry, Korea University, Korea
1Micro Device Engineering / Microdevices, Korea University, Korea
Strain engineering of nanowires (NWs) has been recognized as a powerful strategy for tuning the optical and electronic properties of nanoscale semiconductors. Therefore, the characterization of the strains with nanometer-scale spatial resolution is of great importance for various promising applications. In the present work, we synthesized single-crystalline GaN, GaP, and GaAs nanowires using the chemical vapor transport method and visualized their bending strains (up to 3%) with high precision using the nanobeam electron diffraction technique. The strain mapping at all crystallographic axes revealed that maximum strain exists along the growth direction with the tensile and compressive strains at the outer and inner parts, respectively; the opposite strains appeared along the perpendicular direction; the tensile strain was larger than the coexisting compressive strain at all axes. These results are consistent with the mechanical modulus of bulk phase. Our work provides new insight into the bending strain of III-V semiconductors, which is of paramount importance in the performance of flexible or bendable electronics.