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  • 09월 03일 23시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제122회 대한화학회 학술발표회, 총회 및 기기전시회 안내 High Performance Flexible Organic Field Effect Transistor

등록일
2018년 8월 22일 22시 20분 32초
접수번호
1222
발표코드
MAT.O-5 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 09시 : 28분
발표형식
구두발표
발표분야
Material Chemisty - Oral Presentation of Young Material Chemists
저자 및
공동저자
Geonho Kim, Jiwon Kim*
School of Integrated Technology, Yonsei University, Korea
Recent years, organic based field effect transistor has been actively studied since organic semiconductors are biocompatible, easy to fabricate large area and low in cost.[1] Furthermore, organic semiconductors are flexible compared to conventional semiconductors (such as Si or GaAs etc.); therefore, they are applied in various devices such as wearable devices, robotics, and portable electronics, etc. However, they still suffer from relatively low field effect mobility which is important in transistor performance. Here, we report high performance flexible organic field effect transistor (OFET) using Li doped poly(3-hexylthiophene-2,5-diyl) (P3HT) as channel, ion gel as gate and Au nanoflakes as electrodes. Li doped P3HT has relatively high carrier density and mobility (up to 1.4 cm2/V∙s),[2] whereas ion gel has high carrier conductivity and high stability in ambient environment. Ion gel is also easy to fabricate nano/micro patterns on large area. Also, Au nanoflakes can be deposited onto flexible substrate maintaining good conductivity upon mechanical deformation. In sum, our flexible organic field effect transistor showed high performances (high mobility, stability, short response time and high ON/OFF ratio) suggesting its potential to be applied in various wearable electronic devices. Reference [1] Kim et al. Science advances, 2017, 3.9: e1701114. [2] Guo et al. Journal of Materials Chemistry A, 2014, 2.34: 13827-13830.

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