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제123회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Intrinsic and Photo-Induced Photoluminescence of Atomically Thin Chromium Thiophosphate (CrPS4)

2019년 2월 1일 14시 04분 12초
PHYS.P-101 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
4월 19일 (금요일) 11:00~12:30
Physical Chemistry
저자 및
Suhyeon Kim, Sunmin Ryu*
Department of Chemistry, Pohang University of Science and Technology, Korea
Ultrathin chromium thiophosphate (CrPS4) is a promising antiferromagnetic semiconductor with an optical bandgap in the near IR region. In a recent work [1], we proposed that the its facile photoreaction is a one-photon photochemical oxidation mediated by photosensitized singlet O2. In this study, we investigated intrinsic and photo-induced photoluminescence (PL) of CrPS4 using micro-PL spectroscopy to understand its photophysics and photochemistry. Few-layer CrPS4 samples were prepared by mechanical exfoliation of bulk crystals and characterized with Raman spectroscopy. The bandgap emission of bulk CrPS4 appeared at 1.1 eV along with additional emission peaks in the visible region, which was observed similarly for thin CrPS4 of various thicknesses. In order to reveal which electronic transition is related to the photochemical oxidation, PL and absorption measurements were performed systematically by controlling gas environment and encapsulating sample surfaces with Al2O3 films. Temperature dependence and dynamical aspects of the radiative decays will also be discussed. Reference [1] S. Kim, J. Lee, G. Jin, M.-H. Jo, C. Lee and S. Ryu, “Crossover between Photochemical and Photothermal Oxidations of Atomically Thin Magnetic Semiconductor CrPS4”, submitted.