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대한화학회 제124회 학술발표회 및 총회 New Precursors for Transparent Conducting Oxide Thin Film Transistor by CVD/ALD

등록일
2019년 7월 18일 10시 06분 23초
접수번호
0001
발표코드
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발표시간
목 09시 : 00분
발표형식
구두발표
발표분야
Inorganic Chemistry - Oral Presentation of Young Inorganic Chemistry
저자 및
공동저자
Seong Ho Han, Bo Keun Park1, Seung Uk Son, Taek-Mo Chung2,*
Department of Chemistry, Sungkyunkwan University, Korea
1Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Korea
2Advanced Materials Division, Korea Research Institute of Chemical Technology, Korea
Transparent conducting oxide (TCO) is an important material having high transmittance and low resistivity in the visible light region. It is widely used in applications such as photovoltaics, gas sensors, thin film transistor (TFT) and flat panel display. Mainly, group d10 metal oxides (e.g., In2O3, Ga2O3, ZnO, CdO, and SnO2) are good candidates for TCO materials because of their high mobility, which originates from the overlap of the atomic orbitals comprising the conduction band. Several methods are used to deposit TCO thin films. Among them, chemical vapor deposition (CVD) and atomic layer deposition (ALD) can accurately control the film thickness and chemical composition, and target film properties can be easily achieved. However, the ALD and CVD processes require reactive precursors for successful film deposition. This necessitates the design and development of new precursors as the first step to ensure successful deposition. In this presentation, we demonstrate synthesis of new tin and zinc precursors for depositing TCO TFT. In order to develop new precursors, the strategy with different ligands on each metal was used to control the reactivity in the deposition process. The newly synthesized compounds were analyzed by nuclear magnetic resonance, Fourier transform infrared spectroscopy (FT-IR), elemental analysis (EA), thermogravimetric analysis (TGA), mass spectroscopy and single crystal X - ray diffraction analysis.