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제124회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Functional Blocking Layer of Twisted Tungsten Oxide Nanorod Grown by Electrochemical Anodization for Photoelectrochemical Water Splitting

등록일
2019년 8월 22일 10시 48분 05초
접수번호
0952
발표코드
ELEC.P-412 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 17일 (목요일) 11:00~12:30
발표형식
포스터
발표분야
Electrochemistry
저자 및
공동저자
Pran Krisna Das
Advanced Chemicals & Engineering, Chonnam National University, Bangladesh
The twisted WO3 nanorod (T-WO3 NR) photoanodes are potential candidates for the anodic part of a solar water-splitting device that produces hydrogen fuel and oxygen from water. The twisted WO3 nanorods (T-WO3 NRs) were grown via the electrochemical anodization of tungsten foil in a fluorinated-based electrolyte and the morphology of the films was controlled by the anodization conditions. The synthesized WO3 layer was composed of two distinct layer; the twisted WO3 nanorods (T-WO3 NRs) as an active layer for the PEC reaction and another compact WO3 (C-WO3) layer which acts as a blocking layer (BL) for the charge transport. As increasing the anodization time, the thickness of the twisted WO3 nanorods (T-WO3 NRs) layer approach to be almost same to approximately 700 nm, but the blocking layer is gradually increased 91 nm at 1 min to 633 nm at 120 min in post-thermal annealing. Unexpectedly, the anodic WO3 film having the compact layer with a thickness of about 475 nm exhibited the highest PEC performance, corresponding to the photocurrent density (J) of 0.75 mA/cm2 at 1.23 V vs. reversible hydrogen electrode (RHE) (abbreviated as 1.23 VRHE), subsequently followed by the anodic WO3 film having a less thick compact layer. This means that the C-WO3 layer promotes the charge transport and suppresses the charge recombination underneath the T-WO3 NR layer, demonstrated by the UPS and XPS analyses in depth profile. Furthermore, the etched T-WO3 NR film using 0.03 M NH4OH solution showed a little bit improved J value, resulted from the increased active area for the water oxidation reaction. Eventually, the functionality of compact layer as well as the surface modification by the wet etching process would be discussed in detail.

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