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  • 09월 10일 16시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제124회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Luminescence Differences in InGaN/GaN Blue LEDs According to the Electrode and ITO Shape

등록일
2019년 8월 28일 16시 17분 34초
접수번호
1713
발표코드
INOR.P-110 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 17일 (목요일) 11:00~12:30
발표형식
포스터
발표분야
Inorganic Chemistry
저자 및
공동저자
JoongHo Lee, Gang Yeol Yoo1, Soomin Ahn, Yun Jae Eo2, Woong Kim3, Young rag Do4,*
Kookmin University, Korea
1Department of Advanced Materials Engineering, Korea University, Korea
2Department of Chemistry, Kookmin University, Korea
3Division of Advanced Materials Engineering, Korea University, Korea
4Department of Bionano Chemistry, Kookmin University, Korea
With the development of GaN-based optoelectronic devices, the need for p-GaN contacts with low resistivity, good thermal stability, and high transparency or reflectivity has become more pressing. In this study, InGaN/GaN blue LEDs 750 × 750 μm2 in size with an indium tin oxide (ITO) layer emitting at 450 nm were fabricated. A vacuum evaporation technique was utilized to deposit ITO on p-GaN with a thickness of 150 nm as a spreading layer. When an ITO was etched, a mask was created using a positive photoresist (PR) with a contact aligner and etched by a copper etchant. One problem with chemical etching is that the shape that is etched depends on the temperature and the etching time. The best etching shape is similar to the L-shape of GaN, though somewhat smaller. To solve this problem, we studied how to change the pad shape to compensate for the problems created by ITO etching. Previously, square pads were created in n-GaN and p-GaN, but the complement was to make the full contact by attaching wings to the p-pad part. Each procedure was confirmed by an optical microscope, and the efficiency was measured by a probe station.

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