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  • 09월 10일 16시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제124회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Size and Thickness Effects of Surface Passivation on an ITO-Insulator-Metal Structure with Atomic-Layer-Deposited Al2O3

등록일
2019년 8월 28일 16시 17분 34초
접수번호
1721
발표코드
INOR.P-115 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 17일 (목요일) 11:00~12:30
발표형식
포스터
발표분야
Inorganic Chemistry
저자 및
공동저자
Soomin Ahn, JoongHo Lee, SeungJe Lee, Young rag Do1,*
Kookmin University, Korea
1Department of Bionano Chemistry, Kookmin University, Korea
Stacked ITO-insulator-metal (Ti) structures with atomic-layer-deposited Al2O3 were fabricated to suppress the reverse leakage current and improve the breakdown voltage. The effects of Al2O3 surface passivation based on the size and thickness of the ITO-Al2O3-Ti overlapping area were studied through current-voltage measurements. Stacked structures with Al2O3 thicknesses of 40 nm, 80 nm, and 100 nm fabricated by atomic layer deposition (ALD) showed direct proportional relationships between the corresponding breakdown voltage points. In addition, an inverse proportional relationship between the size of the overlapping area and the breakdown voltage point was experimentally determined. The findings of this study suggest that an appropriate size and thickness of Al2O3 in ITO-insulator-metal structures can improve the breakdown voltage and decrease the reverse leakage current.

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