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제125회 대한화학회 학술발표회 및 총회 Wide Bandgap Two dimensional IV-V Semiconductor Nanosheets

2020년 2월 6일 14시 49분 14초
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Material Chemistry
저자 및
Doyeon Kim, Jong Hyun Lee1, Ik Seon Kwon, In Hye Kwak2, Jisun Yoo, Jaemin Seo3, Jeunghee Park3,*
Advanced Materials Chemistry, Korea University, Korea
1신소재화학과, Advanced Materials Chemistry, Korea
2Micro Device Engineering / Microdevices, Korea University, Korea
3Department of Materials Chemistry, Korea University, Korea
Binary IV-V compounds such as Si-P, Si-As, Ge-P, and Ge-As systems have emerged as another class of potential 2D materials. A number of theoretical works have predicted that their monolayers have bandgaps wide enough (2-3 eV) to efficiently collect visible-light photons, and the bandgap positions are appropriate for visible-light-driven water splitting. Herein, we synthesized 2D GeAs, GeP, and SiAs bulk crystal using a solid-state reaction, and a few layered nanosheets via a mechanical exfoliation of bulk crystal. Liquid-phase exfoliation using tip sonication produced a few layers, and the optical bandgap increased to about 2.1-2.5 eV in visible region, which agrees well with the theoretical bandgap value for the monolayer. We fabricated field-effect transistors to show p-type semiconductors for all of them, with thicikness dependent mobility up to 5 cm2 V-1 s-1, and anistropic ratio of about 2. The photodetectors exhibits a high sensitivity (on/off ratio = 102) with strong anistropy. The dependence of the Raman intensity on the polarization has been also investigated, showing strong anisotropy of phonon vibration.