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  • 09월 20일 16시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제126회 대한화학회 학술발표회 및 총회 New 2D Metallic ZnSb with High Carrier Mobility from 3D Semiconducting ZnSb

등록일
2020년 9월 3일 16시 57분 28초
접수번호
0822
발표코드
MAT.P-491 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 21일(수) 17:30~18:00
발표형식
포스터
발표분야
Materials Chemistry
저자 및
공동저자
Weiqun Lu, Chung In1,*
Department of Chemical and Biological Engineering, Seoul National University, Korea
1School of Chemical & Biological Engineering, Seoul National University, Korea
Since the pioneering work in 2004, graphene, consisting of atomically thin layers of sp2-hybridized carbon atoms, offers a fascinating platform to study the structure–property relationships. Motivated by the success of graphene, alternative emerging members are constantly being explored for many promising applications. Herein, we have meticulously explored the phase evolution of three Zintl zinc antimonides. Particularly, 2D ZnSb with the sp2 hybridization features weak van der Waals forces in the interlayer interactions, endowed with exfoliation availability. The stacking configuration of constituent atoms captured by the aberration-corrected STEM study also implies its exfoliatable behavior. Meanwhile, 2D ZnSb achieves high carrier mobility up to ~468 cm2 V−1 s−1 at room temperature, exceeding 5 times that of 3D ZnSb, comparable to or even superior to those of the other representative 2D materials. Electronic band structures directly visualized by ARPES measurements identify its metallic nature. The work presented here sheds light on developing new unpredictable 2D phases via stepwise topotactic pathways with extraordinary physical properties.

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